A next-generation Schottky barrier diode achieves the rare combination of ultra-low forward voltage and reverse current, delivering superior protection for high-resolution image sensors in ADAS, industrial, and IoT systems—without compromising efficiency or reliability.
A new Schottky barrier diode (SBD) by ROHM Semiconductor is pushing the limits of image sensor protection by achieving what has long been considered technically impossible—combining low forward voltage drop (VF) with low reverse current (IR).
This innovation promises to enhance reliability in high-resolution imaging systems, including advanced driver-assistance systems (ADAS) cameras and industrial vision equipment.
As image sensors evolve toward higher pixel counts and greater sensitivity, they become increasingly vulnerable to photovoltaic voltages generated when exposed to light during power-off conditions.
Author's summary: Schottky diode improves image sensor protection.