ROHM Semiconductor: ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection

ROHM Develops Breakthrough Schottky Barrier Diode

ROHM Semiconductor announced the development of an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off.

This diode delivers high reliability protection for a wide range of high-resolution image sensor applications, such as ADAS cameras.

Modern ADAS cameras require higher pixel counts, creating a growing concern - the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF.

While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway.

ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off.

Author summary: ROHM develops innovative diode for image sensor protection.

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FinanzNachrichten.de FinanzNachrichten.de — 2025-10-24

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